r07ds0885ej0102 rev.1.02 page 1 of 6 nov 28, 2012 data sheet pa2739t1a p-channel mosfet ?30 v, ?85 a, 2.8 m description the pa2739t1a is p-channel mos field effect transistors designed for high current switching applications. features ? v dss = ? 30 v (t a = 25 c) ? low on-state resistance ? r ds(on) = 2.8 m max. (v gs = ? 10 v, i d = ? 46 a) ? r ds(on) = 5.7 m max. (v gs = ? 4.5 v, i d = ? 23 a) ? 4.5 v gate-drive available ? thin type surface mount package with heat spreader ? halogen free ordering information part no. lead plating packing package pa2739t1a-e2-ay ? 1 pure sn tape 3000 p/reel 8-pin hvson(6051) 0.1 g typ. note: ? 1. pb-free (this product does not co ntain pb in external electrode.) absolute maximum ratings (t a = 25 c) item symbol ratings unit drain to source voltage (v gs = 0 v) v dss ? 30 v gate to source voltage (v ds = 0 v) v gss m 20 v drain current (dc) (t c = 25 c) i d(dc) m 85 a drain current (pulse) ? 1 i d(pulse) m 180 a total power dissipation ? 2 p t1 1.5 w total power dissipation (pw = 10 sec) ? 2 p t2 4.6 w total power dissipation (t c = 25 c) p t3 83 w channel temperature t ch 150 c storage temperature t stg ? 55 to + 150 c single avalanche current ? 3 i as -40 a single avalanche energy ? 3 e as 160 mj thermal resistance channel to ambient thermal resistance ?2 r th(ch-a) 83.3 c/w channel to ambient thermal resistance ?2 r th(ch-c) 1.5 c/w notes: ? 1. pw 10 s, duty cycle 1% ? 2. mounted on a glass epoxy boar d of 25.4 mm x 25.4 mm x 0.8 mmt ? 3. starting t ch = 25 c, v dd = ? 15 v, r g = 25 , v gs = ? 20 0 v, l = 100 h r07ds0885ej0102 rev.1.02 nov 28, 2012 8-pin hvson(6051)
pa2739t1a r07ds0885ej0102 rev.1.02 page 2 of 6 nov 28, 2012 electrical characteristics (t a = 25 c) item symbol min. typ. max. unit test conditions zero gate voltage drain current i dss ? 1 a v ds = ? 30 v, v gs = 0 v gate leakage current i gss m 100 na v gs = m 20 v, v ds = 0 v gate cut-off voltage v gs(off) ? 1.0 ? 2.5 v v ds = ? 10 v, i d = ? 1 ma forward transfer admittance ? 1 | y fs | 26 s v ds = ? 10 v, i d = ? 23 a r ds(on)1 2.2 2.8 m v gs = ? 10 v, i d = ? 46 a drain to source on-state resistance ? 1 r ds(on)2 3.8 5.7 m v gs = ? 4.5 v, i d = ? 23 a input capacitance c iss 6050 pf v ds = ? 10 v, output capacitance c oss 3000 pf v gs = 0 v, reverse transfer capacitance c rss 2420 pf f = 1 mhz turn-on delay time t d(on) 27 ns rise time t r 140 ns v dd = ? 15 v, i d = ? 23 a, v gs = ? 10 v, turn-off delay time t d(off) 310 ns r g = 10 fall time t f 490 ns total gate charge q g 153 nc v dd = ? 15 v, gate to source charge q gs 17 nc v gs = ? 10 v, gate to drain charge q gd 70 nc i d = ? 23 a body diode forward voltage ? 1 v f(s-d) 0.85 1.2 v i f = 46 a, v gs = 0 v reverse recovery time t rr 450 ns i f = 50 a, v gs = 0 v, reverse recovery charge q rr 1200 nc di/dt = 100 a/ s note: ? 1. pulsed test circuit 1 avalanche capability r g = 25 50 l v dd v gs = ? 20 0 v bv dss i as i d v ds starting t ch v dd d.u.t. test circuit 3 gate charge test circuit 2 switching time pg. r g 0 v gs ( ? ) d.u.t. r l v dd = 1 s duty cycle 1% v gs wave form v ds wave form v gs ( ? ) 10% 90% v gs 10% 0 v ds ( ? ) 90% 90% t d(on) t r t d(off) t f 10% v ds 0 t on t off pg. pg. 50 d.u.t. r l v dd i g = ? 2 ma ?
pa2739t1a r07ds0885ej0102 rev.1.02 page 3 of 6 nov 28, 2012 typical characteristics (t a = 25c) derating factor of forward bias safe operating area forward bias safe operating area dt - percentage of rated power - % 0 20 40 60 80 100 120 140 0 25 50 75 100 125 150 175 t c - case temperature - c i d - drain current - a -0.01 -0.1 -1 -10 -100 -1000 -0.01 -0.1 -1 -10 -100 tc=25oc sing le pulse power dissipation limited id( pulse) = - 180a p w = 2 0 0 u s 1 m s 1 0 m s 1 0 0 m s r d s ( o n ) l i m i t e d v g s = 1 0 v v ds - drain to source voltage ? v transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - c/w 0.01 0.1 1 10 100 1000 rth(ch-a)=83.3oc/w rth(ch-c)=1.5oc/w rth(ch-a) : mounted on a glass expoxy board of 25.4mm x 25.4mm 0.8mmt single pulse pw - pulse width - s drain current(dc) vs. case temperature drain current vs. drain to source voltage i d(dc) - drain current(dc) - a -0 -20 -40 -60 -80 -100 0 25 50 75 100 125 150 175 t c - case temperature - c i d - drain current - a -0 -50 -100 -150 -200 -0 -0.5 -1 -1.5 pulsed vgs=-4.5v vgs=-10v v ds - drain to source voltage - v 100 1 m 10 m 100 m 1 10 100 1000
pa2739t1a r07ds0885ej0102 rev.1.02 page 4 of 6 nov 28, 2012 forward transfer characteristics gate to source cut-off voltage vs. channel temperature i d - drain current - a -0.001 -0.01 -0.1 -1 -10 -100 -0 -1 -2 -3 -4 vds = -10v pulsed ta=150 c 75c 25c -55c v gs - gate to source voltage - v v gs(off) ? gate to source cut-off voltage - v -0 -1 -2 -3 -50 0 50 100 150 vds = -10v id=-1ma t ch - channel temperature - c forward transfer admittance vs. drain current drain to source on-state resistance vs. drain current | y fs | - forward transfer admittance - s 0.001 0.01 0.1 1 10 100 -0.001 -0.01 -0.1 -1 -10 -100 vds = -10v pulsed ta=150 c 75c 25c -55c i d - drain current - a r ds(on) - drain to source on-state resistance - m 0.0 2.0 4.0 6.0 8.0 10.0 -1 -10 -100 -1000 pulsed vgs=-4.5v vgs=-10v i d - drain current - a drain to source on-state resistance vs. gate to source voltage drain to source on-state resistance vs. channel temperature r ds(on) - drain to source on-state resistance - m 0 5 10 15 20 25 30 -0 -5 -10 -15 -20 id=-46a pulsed v gs - gate to source voltage - v r ds(on) - drain to source on-state resistance - m 0 2 4 6 8 -50 0 50 100 150 vgs=-4.5v id=-23a vgs=-10v id=-46a pulsed t ch - channel temperature - c
pa2739t1a r07ds0885ej0102 rev.1.02 page 5 of 6 nov 28, 2012 capacitance vs. drain to source vo ltage switching characteristics c iss , c oss , c rss - capacitance - pf 100 1,000 10,000 -0.1 -1 -10 -100 vgs = 0v f = 1.0mhz crss ciss coss v ds - drain to source voltage - v td(on), tr, td(off), tf - switching time - ns 10 100 1000 10000 -0.1 -1 -10 -100 vdd = -15v vgs=-10v rg=10 ? td(on) t r td(off) tf id - drain current - a dynamic input characteristics source to drain diode forward voltage v gs - gate to source voltage - v -14 -12 -10 -8 -6 -4 -2 0 0 50 100 150 200 id=-23a vdd= -6v -15v -24v q g - gate charge - nc i f - diode forward current - a 1 10 100 1000 0 0.2 0.4 0.6 0.8 1 pulsed vgs=-10v 0v -4.5v v f(s-d) - source to drain voltage - v
pa2739t1a r07ds0885ej0102 rev.1.02 page 6 of 6 nov 28, 2012 package drawings (unit: mm) 8-pin hvson (6051) 1 2 3 4 7 8 6 5 1.27 5 0.2 5.15 0.2 6 0.2 3.65 0.2 0.7 0.15 0.6 0.15 0.42 ? 0.05 +0.1 0.10 m 0.10 s 0 ? 0 +0.05 0.27 0.05 1.0 max. 4.1 0.2 1, 2, 3 : source 4 : gate 5, 6, 7, 8: drain 5.4 0.2 1 0.2 equivalent circuit source body diode gate drain remark strong electric field, when exposed to this devic e, can cause destruction of the gate oxide and ultimately degrade the device operation. steps must be taken to stop generation of static electricity as much as possible, and quickl y dissipate it once, when it has occurred. renesas package code : pvsn0008da-a
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